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DMN2004K
0.9
1,000
V GS = 2.2V
V GS = 2.0V
900
V DS = 10V
Pulsed
800
V GS = 1.8V
0.6
V GS = 1.6V
700
600
500
400
0.3
V GS = 1.4V
300
T A = 150 ° C
V GS = 1.2V
200
100
T A = 8 5 ° C
T A = 25 ° C
0
0
1 2 3 4
5
0
0.4
T A = -55 ° C
0.8 1.2
1.6
2
1
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
V GS , GATE-SOURCE VOLTAGE (V)
Figure 2 Reverse Drain Current vs. Source-Drain Voltage
1
0.9
0.8
0.7
V DS = 10V
I D = 1mA
Pulsed
0.5
V GS = 10V
Pulsed
0.6
T A = 150 ° C
T A = 125 ° C
T A = 85 ° C
0.5
0.4
0.3
0.2
T A = -55 ° C
T A = 0 ° C
T A = -25 ° C
0.1
0
-75
-50 -25 0 25 50 75 100 125 150
T ch , CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage
vs. Channel Temperature
0.1
0.2
T A = 25 ° C
0.4 0.6 0.8
I D, DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance
vs. Drain Current
1.0
1
V GS = 5V
Pulsed
1.0
0.9
0.8
T A = 25°C
0.5
T A = 150 ° C
T A = 125 ° C
T A = 85 ° C
0.7
0.6
T A = -55 ° C
0.5
0.4
0.3
I D = 540mA
T A = 25°C
T A = 0 ° C
T A = -25 ° C
0.2
0.1
0.1
0.2
0.4
0.6
0.8
1.0
0
0
2
4
6
I D , DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance
vs. Drain Current
V GS , GATE-SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source, On-Resistance
vs. Gate-Source Voltage
DMN2004K
Document number: DS30938 Rev. 9 - 2
3 of 6
www.diodes.com
July 2013
? Diodes Incorporated
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